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PD - 91331C
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Product Summary
Part Number Radiation Level R DS(on) RDS(on) IRHM7160 100K Rads (Si) 0.045 IRHM3160 300K Rads (Si) 0.045 IRHM4160 600K Rads (Si) 0.045 IRHM8160 1000K Rads (Si) 0.045
REF: MIL-PRF-19500/663 (R) RAD Hard HEXFET TECHNOLOGY
IRHM7160 JANSR2N7432 100V, N-CHANNEL
ID QPL Part Number ID 35*A JANSR2N7432 35*A JANSF2N7432 35*A JANSG2N7432 35*A JANSH2N7432
TO-254AA
International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
HEXFET(R) technol-
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight *Current limited by pin diameter For footnotes refer to the last page 35* 35* 201 250 2.0 20 500 35 25 7.3 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical )
g
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1
8/14/01
IRHM7160
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min
100 2.0 16
Electrical Characteristics
Parameter
Typ Max Units
0.107 6.8 0.045 4.0 25 250 100 -100 310 53 110 35 150 150 130 V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID =35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 50V VDD = 50V, ID =35A VGS =12V, RG = 2.35
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in. from package) with Source wires
internally
bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

5300 1600 350

pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
35* 140 1.8 520 6.1
Test Conditions
A
V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current limited by pin diameter
Thermal Resistance
Parameter
R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max Units
0.50 48 0.21
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min
100 K Rads(Si)
Max 4.0 100 -100 25 0.045 0.045 1.8
300 - 1000K Rads (Si)
Min
Max
Units Units V nA A V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (TO-254AA) Diode Forward Voltage"
100 2.0
100 1.25
4.5 100 -100 25 0.062 0.062 1.8
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =35A VGS = 12V, ID =35A VGS = 0V, IS = 35A
1. Part numbers IRHM7160 (JANSR2N7432) 2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET Energy MeV/(mg/cm )) (MeV) 28 285 36.8 305 Range 43 39
VDS(V)
m) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V @VGS=0V @VGS=-5V@ GS=-10V@ GS=-15V@ GS=-20V =-5V@V =-10V@V =-15V@V 100 100 100 80 60 100 90 70 50
120 100 80 VDS 60 40 20 0 0 -5 -10 VGS -15 -20 -25 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7160
Pre-Irradiation
1000
I D , Drain-to-Source Current (A)
100
10
5.0V
1
20s PULSE WIDTH TJ = 25 C
1 10 100
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
10 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 50A
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
2.0
100
1.5
10
1.0
0.5
1
V DS = 50V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7160
10000
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 35A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
6000
Ciss
12
4000
Coss
8
2000
4
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200 240 280
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
ID , Drain Current (A)
100
100us
TJ = 150 C
1ms 10
10
10ms
TJ = 25 C V GS = 0 V
0.8 1.2 1.6 2.0 2.4
1 0.4
1
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM7160
Pre-Irradiation
60
LIMITED BY PACKAGE
50
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
40
-VDD
30
VGS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7160
1400
EAS , Single Pulse Avalanche Energy (mJ)
15V
1200 1000 800 600 400 200 0
ID 9.8A 14A BOTTOM 22A TOP
VDS
L
DRIVER
RG
D.U.T
IAS tp
+ - VDD
A
V/5 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHM7160
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 100A/s, VDD 100V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions TO-254AA
.12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B1.27 ( .050 ) 1.02 ( .040 )
17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 1 2 3
20.32 ( .800 ) 20.07 ( .790 )
13.84 ( .545 ) 13.59 ( .535 )
-C-
LEGEND 1 - COLL 2 - EMIT 3 - GATE
3.81 ( .150 ) 2X
3X
1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC
3.81 ( .150 )
LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01
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